Publications

Ultralong 1D Vacancy Channels for Rapid Atomic Migration during 2D Void Formation in Monolayer MoS2

Written by Merijn | Aug 17, 2018, 12:00:00 PM

Authors: Qu Chen, Huashan Li, Si Zhou, Wenshuo Xu, Jun Chen, Hidetaka Sawada, Christopher S. Allen, Angus I. Kirkland, Jeffrey C. Grossman, Jamie H. Warner

Journal: ACS Nano · Impact Factor: 13.903